注F^+NMOSFET的电离辐照与退火特性  

Effects of γ -ray irradiation and annealing on characteristics of F^+ implanted NMOSFET

作　　者：崔帅 余学峰 任迪远 张华林 

机构地区：[1]新疆理化技术研究所,乌鲁木齐830011

出　　处：《核技术》2004年第8期586-589,共4页Nuclear Techniques

摘　　要：比较了CC4007电路栅介质中注F1和未注F1的NMOS晶体管在不同偏置辐照和不同环境退火的行为,结果表明,栅介质中F1的引入能明显降低器件的辐照敏感性,提高器件的可靠性能。表现为在同样辐照偏置下注F1器件比未注F1器件的阈电压漂移小,辐照后退火期间的界面态、氧化物电荷变化稳定。The influences of irradiation condition, annealing temperature and gate bias on CC4007 NMOS FETs, with and without F+ implanted, have been compared. It is found that the radiation-induced shift of threshold voltage can be restrained by implanting minute amount of fluorine ions. And , reliability of the F+ implanted devices was verified by smooth changes of both interface state charge and oxide state charge during the annealing.

关 键 词：辐照 注F′ NMOS 阈电压 退火 可靠性 

分 类 号：TN304[电子电信—物理电子学]