重掺硅衬底材料中氧沉淀研究进展  

Development on oxygen precipitation in heavily-doped Si

作　　者：张红娣[1] 刘彩池[1] 

机构地区：[1]河北工业大学半导体材料研究所,天津300130

出　　处：《半导体技术》2004年第6期76-79,共4页Semiconductor Technology

摘　　要：对国内外在重掺硅中氧沉淀方面的研究做了综合阐述,对氧沉淀研究现状和存在问题进行了讨论,同时就热处理,掺杂剂对氧沉淀的影响做了浅析,使人们对重掺硅衬底中氧沉淀这一领域有更深的认识。In order to make people further understand the behavior of oxygen precipitation inheavily-doped Si and serve the industry of micro-electronics, the studies of oxygen precipitation inheavily doped Si in the world are summarized. Development and problems at present are discussedsimultaneously, and effects of heat treatment and dopants on oxygen precipitation are analyzed.

关 键 词：重掺硅 氧沉淀 掺杂剂 热处理 

分 类 号：TN305.3[电子电信—物理电子学]