热处理对PI基板铜薄膜金属化TiN阻挡层的影响  

Effect of Heat Treatment on TiN Diffusion Barriers in Copper Thin Film Metallization on PI Substrates

作　　者：刘杨秋[1] 梁彤祥[1] 付志强[1] 倪晓军[1] 赵福群[2] 

机构地区：[1]清华大学核能技术设计研究院,北京100084 [2]清华大学,北京100084

出　　处：《稀有金属材料与工程》2004年第6期662-665,共4页Rare Metal Materials and Engineering

摘　　要：聚酰亚胺(PI)材料具有介电常数低,分解温度高及化学稳定性好等优点,是很有前途的电子封装材料。Cu具有低的电阻和高的抗电迁移能力,是PI基板金属化的首选材料。采用物理气相沉积(PVD)方法在PI 基板上沉积Cu薄膜,利用TiN陶瓷薄膜阻挡Cu向PI基板内部扩散。研究热处理条件下TiN陶瓷薄膜阻挡层的阻挡效果、Cu膜电阻变化以及Cu膜的结合强度,俄歇谱图分析表明TiN可以有效地阻挡Cu向PI内的扩散。300℃热处理消除了Cu膜内应力,提高了Cu膜的结合强度。Polyimide (PI) materials have attracted much attention as a promising substrate in electronic packaging, on the basis of fact that PI has a low dielectric constant and the good thermal-mechanical and chemical properties. Copper offers a better electromigration-resistant performance and lower thin film resistivity as compared with other interconnects. Copper thin films were deposited on PI substrates by physical vapor deposition (PVD) method. Amorphous TiN film with thickness of 150 nm prepared by PVD was used as a diffusion barrier between Cu on PI. Effect of heat treatment up to 300degreesC on the behavior of TiN diffusion barriers and copper film resistivity were studied. The spectra of AES depth profile indicated that TiN prevented Cu from diffusing into PI from room temperature to 300degreesC: After treatment, the adhesion strength of copper films was measured by the peel test, the adhesion improvement by heat treatment was mainly attributed to the removal of tensile residual,stress in copper films.

关 键 词：聚酰亚胺 铜薄膜 TIN 热处理 

分 类 号：TN405[电子电信—微电子学与固体电子学]