硅基镓浓度对GaN晶体膜质量的影响  

Influence of Ga Concentration in Si Substrates on the Quality of GaN Films

作　　者：孙振翠[1] 曹文田[1] 魏芹芹[1] 薛成山[1] 李玉国[1] 董志华[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《微细加工技术》2004年第3期33-38,共6页Microfabrication Technology

基　　金：国家自然科学基金重大研究计划资助项目(90201025);国家自然科学基金资助项目(90301002)

摘　　要：采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜,再氮化反应组装GaN晶体膜,并对其生长条件进行了研究。用傅里叶红外谱仪(FTIR)、X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)和光致发光(PL)谱对样品进行结构、形貌和发光特性的分析。测试结果表明,采用此方法可得到六方纤锌矿结构的GaN晶体膜。镓浓度在影响膜层质量方面起着不可忽视的作用,随着扩镓浓度的增加,薄膜的晶化程度和发光特性明显提高。Gallium nitride thin films have been successfully grown on the Ga-diffused Si (111) substrates through nitriding Ga_2O_3 thin films deposited by rf magnetron sputtering and the growth condition was investigated. Fourier transform infrared transmission (FTIR) spectroscopy, X-ray diffraction (XRD), scanning electron mi-croscopy (SEM), selected area electron diffraction (SAED) and photoluminescence (PL) were employed to analyze the structure, surface morphology and optical properties of the synthesized samples. The results reveal that the as-grown films are hexagonal GaN of wurtzite texture. Varying the Ga concentration was found to have great effect on the crystal quality of GaN films, and the crystal quality and optical properties were improved with the increasing Ga concentration.

关 键 词：Ga2O3薄膜 GaN晶体膜 射频磁控溅射 镓浓度 

分 类 号：TN304[电子电信—物理电子学]