Zn_(1-x)Cd_xSe-ZnSe多量子阱的光学双稳态  

OPTICAL BISTABILITY IN Zn_(1-x) Cd_x Se-ZnSe MULTIPLE QUANTUM WELLS

作　　者：杨宝均[1] 宋士惠[1] 张吉英[1] 陈连春[1] 郑著宏[1] 吕有明 范希武[1] 

机构地区：[1]中国科学院长春物理研究所,长春130021

出　　处：《发光学报》1993年第3期221-224,共4页Chinese Journal of Luminescence

基　　金：国家863高技术;国家攀登计划及国家自然科学基金

摘　　要：用常压MOCVD法在GaAs衬底上生长了Z_(n1-x)Cd_xSe-ZnSe多层结构.通过X-射线衍射谱和光致发光等方法判断,表明该材料为多量子阱结构.从室温下的透射光谱上可以观察到这种多量子阱中的n=1的激子吸收峰,并观测到起因子激子的ns量级的光学双稳态.Zn1-xCdxSe-ZnSe multilayers structure have been grown on GaAs substrate by atmospheric pressure MOCVD. This multilayers structure was diagnosed as multiple quantum wells (MQWs) by X-ray diffraction rocking curve and photolumineseence. Free exciton absorption peak in this MQWs structure is observed in the transmitted spectrum at room temperature. We first found out the optical bistability in Zn1-x Cdx Se-ZnSe MQWs with the nanosecond response time at room temperature.

关 键 词：多量子阱 双稳态 半导体材料 激子 

分 类 号：TN204[电子电信—物理电子学]