磁控溅射制备ZnO薄膜的受激发射特性的研究  

Stimulated Emission Characteristics of ZnO thin Films Deposited by Magnetron Sputtering on SiO_2 Substrates

作　　者：王晶[1] 张希清[1] 腾小瑛[1] 熊德平[1] 林鹏[1] 王丽[1] 黄世华[1] 

机构地区：[1]北京交通大学光电子技术研究所

出　　处：《光谱学与光谱分析》2004年第7期775-778,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金 (6960 60 0 1 );高等学校骨干教师资助计划 (2 0 0 0 668);教育部留学回国人员科研启动基金 (Lico30 0 4 )资助

摘　　要：用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。ZnO thin films were deposited by magnetron sputtering on SiO2 substrates. The temperature dependence of the absorption spectra and the photoluminescence spectra was studied for ZnO thin film. The absorption of the longitudinal optical (LO) phonons and the free-excitons was observed at room temperature. The free-exciton emission was only observed in PL spectra at room temperature, the results indicate that ZnO thin films have excellent quality and low density of defects. The stimulated emission properties of ZnO thin films were investigated. When excitation intensity is above threshold, the FWHM of stimulated emission peak increases and the stimulated emission peak shows red shift with increasing excitation intensity. Our analysis shows that the optical gain is due to electronhole plasma emission.

关 键 词：氧化锌薄膜 磁控溅射 受激发射特性 制备 光电子材料 

分 类 号：O484.4[理学—固体物理] TN204[理学—物理]