硅射频微带电路S参数模拟研究  

A Study on S Parameters of RF Microstrip Circuits on Si

作　　者：韩振宇[1] 李树翀[1] 汪锁发[1] 赵知夷[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2004年第2期241-244,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展规划 (973;G2 0 0 2CB31190 6 )资助项目

摘　　要：对不同电阻率硅片射频微带电路S参数进行了模拟研究。建立了 5层结构的微带电路物理结构模型 ,对两种电阻率硅片上不同尺寸 (2× 10 - 5m到 2 0× 10 - 5m)微带线 1～ 10GHz频率范围内的S1 1 和S2 1 参数进行模拟计算。研究结果表明 :减少低电阻率硅片 (3～ 8Ω·cm)线条宽度对减小信号反射和提高传输有益 ;高电阻率硅片 (130～ 15 0Ω·cm)上细线条尺寸微带电路信号反射和提高传输特性也更好。频率越高 ,高阻硅片微带电路的高频性能更好。Microstrip circuits with s parameters on different resistance Si wafers are investigated and created a physics model of five-layer microstrip circuits. The s parameters of microstrip lines are analyzed on this model from 1GHz to 10GHz. Its sizes change from 2×10^(-5)m to 20×10^(-5)m. The results show that reducing the size of microstrip lines can decrease the reflection and increase the transmission of the high frequency signals on low-resistance silicons (3～ 8Ω·cm). High-resistance silicons(130～150 Ω·cm)show similar characteristics. Microstrip circuits on high-resistance silicon manifest their better performance in high frequency than those on low-resistance silicon.

关 键 词：硅片 微带电路 S参数 反射 传输 

分 类 号：TN45[电子电信—微电子学与固体电子学]