氧分压对电子束蒸发ZrO_2薄膜微结构的影响  

Influence of O_2 Partial Pressure on the Micro-structure of ZrO_2 Thin Films by Electron Beam Evaporation

作　　者：陈松林[1] 赵北君[1] 朱世富[1] 马平[2] 胡建平[2] 胡江川[2] 

机构地区：[1]四川大学材料科学系,成都610064 [2]成都精密光学工程研究中心,成都610041

出　　处：《四川大学学报（自然科学版）》2004年第4期774-777,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：国家 8 6 3- 80 4基金

摘　　要：用XRD衍射技术分析了基片转动和充氧条件对ZrO2 薄膜组成结构的影响 ,发现在相同低氧压条件下 (P≤ 1 .1× 1 0 - 2 Pa)基片转动能够改变薄膜的组成结构 ,即薄膜发生从四方相到单斜相的转变 ;随着氧压进一步升高 ,ZrO2 薄膜将由多晶态逐渐转变为无定形结构 .同时发现基片转动能够降低充氧条件对表面粗糙度和晶粒大小的影响 .激光阈值损伤测量表明 ,氧压条件影响着ZrO2 薄膜的抗激光损伤能力 ,且多晶结构的激光损伤阈值高于无定形结构 .Influence on the micro-structure of ZrO_2 thin films at different conditions of the substrates circumrotation and different oxygen pressure was analysed by X-ray diffraction technology. The structure of ZrO_2 thin films can be changed from tetragonal to monoclinic with the substrates revolve at the same low-O_2 pressure condition(P≤1.1×10 -2 Pa). With further increase of O_2 pressure morphology transition will occur from polycrystalline to amorphism. In addition the substrates revolve can decrease the influence of O_2 pressure on the surface roughness and crystallite size. The result of laser damage threshold determination indicates that O_2 pressure condition can influence laser damage of ZrO_2 thin films,and polycrystalline structure is better than amorphism.

关 键 词：电子束蒸发 ZRO2薄膜 氧分压 XRD 表面粗糙度 激光损伤 

分 类 号：O484.5[理学—固体物理]