AI/GaAs界面微结构的慢正电子束研究  

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

作　　者：翁惠民[1] 周先意[1] 徐纪华[1] 孙式军 朱警生 武淑兰[1] 韩荣典[1] 

机构地区：[1]中国科学技术大学近代物理系,合肥230027 [2]中国科学院中国科学技术大学结构研究开放实验室,合肥230026

出　　处：《高能物理与核物理》1993年第9期775-783,共9页High Energy Physics and Nuclear Physics

基　　金：国家自然科学基金;中国科学院中国科学技术大学结构研究开放实验室;上海冶金研究所离子束实验室资助

摘　　要：基于正电子扩散方程,对于线形全吸收型等特殊的界面模型,求得了正电子湮没辐射多普勒展宽S参数与单能慢正电子入射能量E之间函数关系S(E)的解析表达式。测量不同膜厚、不同退火条件下Al/GaAs的S(E),用所得解析式拟合实验数据,发现Al/GaAs界面系统与线形全吸收型界面模型符合得很好。通过拟合,得出了界面S参数S_1及其与膜厚和退火温度的关系,由此对界面微结构及其动力学特性作了讨论。A series of interface models were founded, and the expressions of relation between Doppler Broadening S-parameter and implanted energy of positrons were obtained from the diffusion equation of positrons. Interfaces formed between Al and (110) surfaces of GaAs were studied with Slow Positron Beam. The system of Al/GaAs interfaces could be illustrated by perfectly absorbing linear interface model. From the results fitted by the model, the relation between the S-parameter of interfaces and the annealing temperatures or the thickness of films was derivtd and the microstructure of interfaces and its dynamical characters discussed.

关 键 词：铝/砷化镓 界面 显微结构 正电子束 

分 类 号：O472.1[理学—半导体物理]