CuInSe_2纳米颗粒膜的磁控溅射制备和特性分析  

Characteristic of CuInSe_2 Nanoparticle Film Prepared by Magnetron Sputtering

作　　者：苗晔[1] 孙海燕[2] 

机构地区：[1]烟台大学光电信息科学技术学院,山东烟台264005 [2]烟台大学环境与材料工程学院,山东烟台264005

出　　处：《真空电子技术》2004年第3期40-42,共3页Vacuum Electronics

摘　　要：采用Cu,In,Se三元扇形复合靶,在玻璃基片上用射频磁控反应溅射技术制备CuInSe2(CIS)纳米颗粒膜。CIS颗粒的大小可通过改变溅射功率、基片温度和膜厚来调节。测量并讨论了所制备的CIS纳米颗粒膜的内部晶相结构、电阻率、导电类型以及光吸收等性质。CuInSe_2(CIS) nanoparticle thin films have been prepared by RF reactive magnetron sputtering from a fan-shape compound ternary target. The average diameters of particles can be controlled by the sputtering power, substrate temperature and film thickness. Internal structures, resistivity, carrier types and absorptance of the films were also investigated in this paper.

关 键 词：铜铟硒 射频溅射 纳米颗粒膜 

分 类 号：O484[理学—固体物理]