垂直浸渍液相外延Hg_(1-x)Cd_xTe的生长及性能  

Growth and Characterization of Hg_(1-x)Cd_xTe by means of Vertical Dipping Liquid-Phase Epitaxy

作　　者：陈新强[1] 褚君浩[1] 张恕明[1] 张小平[1] 俞振中[1] 周捷 邢思皓 蔡琤 季华美[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《功能材料》1993年第3期231-237,共7页Journal of Functional Materials

摘　　要：本文报导采用汞回流垂直浸渍液相外延方法,在CdTe或CdZnTe(111)面的衬底上生长Hg_(1-x)Cd_xTe单晶,其厚度为20μm,面积为1.5×2cm^2,组分x从0.18到0.7,组分均匀性Δx≈0.001。样品经热处理以后,x=0.2的n型样品电子浓度n≈1×10^(15)cm^(-3),电子迁移率μ≈10~5cm^2/v·s,p型样品空穴浓度p≈2×10^(16)cm^(-3),空穴迁移率μ≈300cm^2/v·s,双晶衍射显示样品的半峰宽为90arc sec,X光貌相分析表明外延层晶体结构优良。样品的红外光谱测量,电学参数测量以及载流子寿命测量表明样品具有优良的光电性质。The growth of liquid-phase -epitaxial (LPE) layer Hg_(1-x)Cd_xTe on CdTe or CdZnTe(111)substrate by means of vertical dipping system has been reported in this paper. The samples of LPE Hg_(1-x)Cd_xTe with composition, (x, from 0.18 to 0.70)and composition uniformity of △x≈0.001 have been grown. The thickness and the area of LPE sample are about 20μm and 1.5×2cm^2 respe- ctively. After annealing for n-type Hg_(1-x)Cd_xTe samples with x=0.2, the electron concentration and mobility are about n≈1×1015cm^(-3) and μ≈105cm^2/v·s at 77K respectively, and the hole concentration and mobility are about p≈2× 1016cm^(-3), μ≈300cm^2/v·s at 77K respectively for p-type samples. The half peak wicth of 90' at X-ray double crystal diffraction measurements was determined for the LPE layer. It shows that the good quality of the LPE samples has been demonstrated by means of the measurements of X-ray topograph analysis, infrared spectroscopy, electrical properties, carrier life-time etc.

关 键 词：晶体生长 液相外延 碲镉汞 性能 

分 类 号：TN304.054[电子电信—物理电子学]