低温分子束外延生长GaAs材料及相关器件研究进展  

Development of Investigation on LT MBE GaAs and Related Devices

作　　者：李瑞钢[1] 王占国[1] 梁基本[1] 范提文 邓航军[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《功能材料》1993年第3期269-276,共8页Journal of Functional Materials

摘　　要：本文概括了低温分子束外延GaAs(LT MBE GaAs)材料的发展历史及国内外的最新研究状况。简单介绍了这种材料在器件方面的应用及其性质的理论研究进展。针对此种材料研究中尚需解决的一些问题进行了讨论,并就国内现有基础分析了此项研究的必要性及可行性。A brief review of the past and recent progresses of the GaAs grown by molecular beam epitaxy at low substrate temperature (LT MBE CaAs) has been presented. An introduction to the characterization and the basic studies of LT MBE GaAs and the related device-application has been given. The transport mechanism of LT MBE GaAs has been discussed in detail. Latly, both the necessity and the feasibility of the LT MBE GaAs have been investigated in the line with the domestic technology.

关 键 词：低温 分子束 砷化镓 外延生长 

分 类 号：TN304.23[电子电信—物理电子学]