锰铜薄膜的制备及压阻特性  

Piezoresistance Characteristics of Manganin Thin Films

作　　者：杨邦朝[1] 滕林[1] 杜晓松[1] 周鸿仁[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《电子元件与材料》2004年第9期3-5,共3页Electronic Components And Materials

基　　金：军事电子预研基金资助项目(AW030412)

摘　　要：为了锰铜传感器微型化,采用直流磁控溅射法制备适合高压力测量的锰铜薄膜,用X射线衍射和扫描电子显微镜技术分析了薄膜的结构和形貌,动态加载实验标定了锰铜薄膜的压阻系数。研究结果表明,晶粒尺寸决定了薄膜的压阻系数,经360℃热处理1h后,薄膜晶粒长大,压阻系数有着明显提高(K值达到0.02GPa–1),性能达到锰铜箔的水平。For sensor of manganin microminiaturization, manganin thin films aimed at high-pressure measurement were prepared by DC magnetron sputtering. The structure and morphology of the films were analysed by XRD and SEM technique. The piezoresistance coefficient K is abtained through dynamic calibration. The experimental result shows that K depends on grain size of films. It is found that heat treatment at 360℃, 1 h is helpful for the growth of larger size grains, and improves K of the films (0.02 GPa–1). The value of K is equal to that of the foil-like.

关 键 词：锰铜薄膜 X射线衍射 扫描电镜 压阻系数 

分 类 号：TN304.055[电子电信—物理电子学]