GaN纳米结构的制备  

Synthesis of GaN Nanostructures

作　　者：马洪磊[1] 杨莺歌[1] 薛成山[2] 马瑾[1] 肖洪地[1] 刘建强[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]山东师范大学半导体研究所,山东济南250014

出　　处：《稀有金属》2004年第3期455-457,共3页Chinese Journal of Rare Metals

摘　　要：提出一种通过对溅射Ga2 O3薄膜后氮化技术制备GaN纳米结构的方法 ,已成功地制备出GaN纳米线、纳米棒和纳米带。该方法既不需要催化剂 ,也不需要模板限制 ,不仅避免了杂质污染 ,而且简化了纳米结构的制造工艺 ,对于纳米结构的应用非常有利。利用扫描电子显微镜 (SEM)、透射电子显微镜 (TEM)和选区电子衍射 (SAD)研究了GaN纳米结构的形貌和晶格结构。结果表明GaN纳米结构是具有六角纤锌矿结构的GaN晶体 ,不存在Ga2 O3或Ga的其他相。研究结果证明在高温氮化过程中由于晶格缺陷的降低和晶化的改进能够得到高质量的GaN晶体。简要地讨论了GaN纳米结构的生长机制。A novel method to synthesize one-dimensional nanostructure GaN by post-nitriding Ga_2O_3 film deposited by RF magnetron sputtering was developed. The method requires neither metal catalyst nor the effect of nanometer-sized confinement, and it simplifies nanostructures fabrication and is highly beneficial to the consequential applications of the nanostructrures. The morphology and lattice structure of GaN nanostructures were investigated by using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and selected area electron diffraction (SAD). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga_2O_3 or Ga in the specimen. It also confirms that high quality crystal is obtained in the resulting sample due to the lattice defects in the films decreases and the crystallinity improves in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures was briefly discussed.

关 键 词：GAN 纳米结构 制备 后氮化技术 

分 类 号：TN304[电子电信—物理电子学]