反偏籽晶晶向生长Φ2″HB-GaAs单晶  

Growth of Φ2″ HB-GaAs Single Crystal with Inversely Deviating Seed

作　　者：王继荣[1,2] 武壮文[1,2] 于洪国 张海涛[1,2] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]国瑞电子材料有限责任公司,河北廊坊065001

出　　处：《稀有金属》2004年第3期458-461,共4页Chinese Journal of Rare Metals

摘　　要：HB-GaAs ( 10 0 )片要偏离生长截面 5 4.7°～ 60°切割 (〈10 0〉和〈111〉之间的夹角是 5 4.7°)。如果籽晶方向与〈10 0〉之间的夹角少于 5 4.7°,称为反偏籽晶。而采用大于 5 4.7°角生长的单晶切割比较困难 ,尤其是厚度小于 3 0 0 μm的晶片。为了减少切割难度 ,可生长反偏籽晶的单晶 ,但要保证单晶能割出Φ2″( 10 0 )圆片 ,必须增加单晶锭的截面积。由于GaAs的热导率小 ,大截面单晶生长要困难得多。通过改变固液截面附近的加热元件结构 ,在特定方向加强了散热 ,延伸了温度梯度的线性范围 ,使用反偏籽晶 ,成功地生长了Φ2″HB GaAs单晶。和正偏籽晶单晶相比 ,这些单晶锭的切割破损率减少了 2 4% ,每 10 0mm长度出片数增加了 3 0 %。HB GaAs wafer can be cut from ingot off 54.7°～60° from direction <111> (angle between <100> and <111> is 54.7°). If the seed orientation with the angle less than 54.7°, it is called inversely deviating seed. It is much more difficult to cut single crystal grown by the seed with larger angle deviation, especially for thinner wafer, such as wafer with less than 300 μm in thickness. In order to decrease cut difficult, single crystal may be grown with inversely deviating seed and keep wafer cut from this ingot to reach Φ2″ in diameter, the height of cross section of ingot should be increased. It is also much more difficult to grow single crystal with larger size of cross section because of small thermal conductivity of GaAs. Through changing structure of heating element near interface of solid and liquid, increasing thermal release at specific direction, enlarging area in which temperature gradient is linear, Φ2″ HB-GaAs single crystal with inversely deviating seed was grown successfully. Comparing to single crystal grown with normal seed, quantity of broken wafer in process of cutting for these ingots is reduced to 24% and quantity of wafer cut per millimeter length is increased to 30%.

关 键 词：反偏籽晶 热导率 HB-GaAs单晶生长 

分 类 号：TN304.053[电子电信—物理电子学]