半绝缘砷化镓(SI-GaAs)单晶中的微缺陷的研究  

Research on Microdefects in SI-GaAs Single Crystal via TEM and EDTA

作　　者：王海云[1] 张春玲[1] 唐蕾[1] 刘彩池[1] 申玉田[1] 徐岳生[1] 覃道志 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130 [2]空军天津航空装备技术训练基地,天津300131

出　　处：《稀有金属》2004年第3期547-550,共4页Chinese Journal of Rare Metals

基　　金：国家自然科学基金 ( 60 2 760 0 9) ;中国人民解放军总装备部 ( 0 0JS0 2 2 1QT45 0 1) ;河北省自然科学基金 ( 5 990 3 3 )资助项目

摘　　要：砷化镓 (GaAs)为第二代半导体材料 ,GaAs衬底质量直接影响器件性能。利用JEM 2 0 0 2透射电子显微镜 (TEM)及其主要附件X射线能量散射谱仪 (EDXA) ,对半绝缘砷化镓 (SI GaAs)单晶中微缺陷进行了研究。发现SI GaAs单晶中的微缺陷包含有富镓沉淀、富砷沉淀、砷沉淀、GaAs多晶颗粒和小位错回线等。还分析了微缺陷的形成机制。GaAs is one of the second-generation semiconductor materials and the quality of GaAs substrate has a direct influence on devices performance. Microdefects in SI-GaAs single crystal were researched via transmission electron microscope (TEM) and energy dispersion X-ray analysis (EDXA). It is found that microdefects in SI-GaAs have various forms such as As-riched micro-precipitates, As microdefects, Ga-riched microdefects, polycrystal particles and little dislocation loop. In addition, the formation mechanics of microdefects was discussed.

关 键 词：砷化镓 半导体材料 SI-GAAS 单晶 微缺陷 小位错回线 沉淀成核中心 

分 类 号：TN304.2[电子电信—物理电子学]