低能离子束方法制备Fe组分渐变的Fe-Si薄膜  

Iron Content Gradually Variational Fe-Si Film Prepared by Low Energy Ion Beam Method

作　　者：刘力锋[1] 陈诺夫[1] 张富强[1] 陈晨龙[1] 李艳丽[1] 杨少延[1] 刘志凯[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《稀有金属》2004年第3期558-562,共5页Chinese Journal of Rare Metals

基　　金：国家自然科学基金 ( 60 1760 0 1;60 3 90 0 72 ) ;国家重大基础研究计划资助项目 (G2 0 0 0 0 3 65 ;G2 0 0 2CB3 1190 5 )

摘　　要：利用质量分离的低能离子束技术 ,获得了Fe组分渐变的Fe Si薄膜。利用俄歇电子能谱法 (AES)、X射线衍射法 (XRD)以及X射线光电子能谱法 (XPS)测试了薄膜的组分、结构特性。测试结果表明 ,在室温下制备的Fe Si薄膜呈非晶态。非晶薄膜在 40 0℃下退火 2 0min后晶化 ,没有Fe的硅化物相形成。退火后Fe Si薄膜的Fe组分从表面向内部逐渐降低。Iron content gradually variational Fe-Si film was prepared by low energy ion beam method. The compositional and structural properties of the Fe-Si film were analyzed by Auger electron spectroscopy, X-ray diffraction spectroscopy and X-ray photoemission spectroscopy. The measurement results show that the Fe-Si film prepared at room temperature is amorphous. The amorphous film is crystallized after as-implanted sample was annealed at 400 ℃ for 20 min and no iron silicides are formed. The iron content of the annealing Fe-Si film gradually decreases from the surface of sample to the inside of sample. Iron content gradually variational Fe-Si solid solution film was prepared.

关 键 词：低能离子束 硅 铁 薄膜 

分 类 号：TN304.7[电子电信—物理电子学]