多孔硅结构与发光机理的非线性光学研究  

Study of visible light-emitting porous silicon by using infrared-upconversion luminescence generation

作　　者：王健 蒋红兵 王文澄[1] 郑家骠 张甫龙[2] 郝平海[2] 候晓远 王迅[2] 

机构地区：[1]复旦大学三束材料改性国家重点实验室,上海200433 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《光学学报》1993年第5期388-392,共5页Acta Optica Sinica

基　　金：国家自然科学基金的资助

摘　　要：最近的研究中,采用1.06μm超短脉冲光激发,在多孔硅表面观察到了有效的红外多光子激发的荧光发射.研究表明,这是一个增强的三阶非线性光学过程.本文利用其三阶非线性特性对具有强可见光发射的多孔硅结构进行了研究,结果显示晶体硅的各向异性特征在多孔硅中几乎被保留;此外,较强的激光激发导致的红外上转换荧光信号衰减过程被归结为与多孔硅表面氢的脱附有关.The efficient infrared-upconversion luminescence generation, which was considered as an enhanced third-order nonlinear optical process by our primary study, was used as a probe of the bulk symmetry properties and mechanism of light-emitting porous silicon layer (PSL). It was found that the crystalline anisotropy of crystal silicon is almost remained for PSL. The observation of laser-induced decreasing of infrared-upconversion signal demonstrated that the presence of hydrogen in the PSL, is essential to the luminescence efficency.

关 键 词：多孔硅 发光 硅 非线性光学 

分 类 号：O472.3[理学—半导体物理]