富Sb状态下GaSb/AlGaSb异质结的液相外延生长  

LPE GROWTH OF GaSb/ Al_xGa_(1-x)Sb HETERO JUNCTION STRUCTURE IN THE Sb-RICH REGION

作　　者：张冰阳[1] 何益民[1] 朱李安[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,710068

出　　处：《光子学报》1993年第2期132-135,共4页Acta Photonica Sinica

基　　金：西安分院院长青年基金

摘　　要：本文分析了以往在制作GaSb/Al_xGa_(1……x)Sb结构雪崩光电二极管(APD)中存在的问题,提出了在富Sb状态下进行液相外延(LPE)生长GaSb/AlGaSb异质结APD的方法。经过多次试验获得了在富Sb状态下Al-Ga-Sb三元系相图数据,并且在富Sb状态下液相外延生长出了优良的AlGaSb外延层。The Problems in the early fabrication of GaSb/ AlGaSb heterojunction structure avalanche photodiodes are analysed. A way of LPE growth of GaSb/ AlGaSb heterojunction structure APD is proposed. The phase diagram data of Al- Ga- Sb ternary system in the Sb- rich region have been determined by the experiment. The AlGaSb epilayers with good surface morphology have been obtained from Sb- rich solutions with the way of liquid phase epitaxy.

关 键 词：异质结 液相外延生长 锑化镓 

分 类 号：TN304.054[电子电信—物理电子学]