共振腔增强GaInAsSb光电探测器设计及数值模拟  

Design of GaInAsSb RCE Infrared Photodetector

作　　者：李军[1] 宋航[1] 金亿鑫[1] 蒋红[1] 缪国庆[1] 赵海峰[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,长春130033

出　　处：《红外技术》2004年第4期69-72,共4页Infrared Technology

基　　金：国家自然科学基金资助项目(60177014; 50072030;50132020)

摘　　要：设计了一种从衬底入射的共振腔增强型GaInAsSb/GaSb光电探测器结构。在这种结构中,上反射镜是由9.5～15.5个周期的InAs/GaSbQWS组成,下反射镜由3个周期的SiO2/SiQWS组成。器件上表面镀有一层高透射率的抗反射层。计算表明,在设计的工作波长2.4mm,器件可以获得大约(91～88)%的量子效率。在2～2.9mm波长范围器件的量子效率有两个峰,这使得器件可以作为双色探测器来工作。The structure of RCE GaInAsSb/GaSb photodetector that the light is incident from the substrate has been designed. The top reflector for this structure is made of 9.5～15.5 periods InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods SiO2/Si QWS. The antireflection coating with more than 99% transmissivity is deposited on the substrate surface. The simulation shows that the quantum efficiency could be more than or nearly to 90% at design wavelength 2.4 μm. The device has two spectral response peaks, which could make the device as double-color detector.

关 键 词：共振腔增强 GAINASSB 光电探测器 DBR 反射率 量子效率 

分 类 号：TN215[电子电信—物理电子学]