磁控溅射原理的深入探讨  

An analysis in depth for the principle of magnetron-sputtering

作　　者：赵嘉学[1] 童洪辉[1] 

机构地区：[1]核工业西南物理研究院,四川成都610041

出　　处：《真空》2004年第4期74-79,共6页Vacuum

摘　　要：从更深层次——电子在非均匀电磁场中的运动规律 ,探讨了磁控溅射的更一般原理以及磁场的横向不均匀性及对称性是磁约束的本质原因。对工件温升、临界磁场、脱缚电子的能量及原因。The more general principles of magnetron-sputtering were discussed. The non-uniformity and symmetry of the magnetic field were the main causes of magnetic restriction. Also the increase of the temperature of substrates, critical magnetic field, the energy and cause of escaped electron, the cause of the sputtered lane were analyzed.

关 键 词：磁力线走廊 磁阻力 横向磁约束 电子浓度分布 磁控溅射 镀膜 

分 类 号：TB43[一般工业技术] O53[理学—等离子体物理]