退火工艺对钛酸锶钡薄膜结构的影响  

Stracture of Ba_(0.6)Sr_(0.4)TiO_(3) Thin Films Prepared by Sputterring Dependance on Annealing Process

作　　者：赵莉[1] 杨传仁[1] 冷文建[1] 陈宏伟[1] 符春林[1] 廖家轩[1] 高志强[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《电子元件与材料》2004年第10期17-19,共3页Electronic Components And Materials

基　　金：国家"973"项目

摘　　要：采用射频磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备Ba0.6Sr0.4TiO3(BST)铁电薄膜,在500～750℃之间对薄膜快速退火.XRD分析表明:500℃时BST薄膜开始晶化为ABO3型钙钛矿结构,温度越高结晶越完整,晶粒越大.理论计算表明,薄膜在低温退火后无择优取向,高温退火后在(111)、(210)晶面有择优取向.退火气氛、保温时间、循环次数等因素对薄膜晶粒大小无明显影响,但对表面粗糙度和结晶程度影响较大.Ba0.6Sr0.4TiO3 thin film was prepared by RF magnetron sputtering system on Pt/Ti/SiO2/Si(100)substrate. The thin films was annealed from 500℃ to 750℃ by rapid thermal treatment. XRD pattern shows that ABO3 perovskite structure was formed at 500℃ and became more perfect above 550℃. The higher temperature, the better the crystallization and the greater grain size are. The structural coefficient (Ci) and its normalized variance (), which are used to judge the preferred orientation, were calculated. On the contrary, the annealing atmosphere、the retention time and the circulation times do not influence on the grain sizes but influence on the crystallization degree and the average surface roughness.

关 键 词：无机陶瓷材料 BST薄膜 退火 择优取向 RMS XRD AFM 

分 类 号：TN384[电子电信—物理电子学]