Degradation of pMOSFETs with Ultrathin Oxide andDifferent HALO Dose  

不同HALO掺杂剂量的超薄栅pMOSFET的退化(英文)

作　　者：赵要[1] 胡靖[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《Journal of Semiconductors》2004年第9期1097-1103,共7页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目 (批准号 :G2 0 0 0 -0 3 65 0 3 )~~

摘　　要：The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO dose changing,but the d egradation quantities of linear drain current,saturation drain current,and maxim um transconductance increase with HALO dose enhancing and are larger than those of speculated before.The degradation of device parameters (linear drain current, saturation drain current,and maximum transconductance) is attributed to not onl y the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.研究了热载流子应力下栅厚为 2 .1nm ,栅长为 0 .135μm的 p MOSFET中 HAL O掺杂剂量与器件的退化机制和参数退化的关系 .实验发现 ,器件的退化机制对 HAL O掺杂剂量的改变不敏感 ,但是器件的线性漏电流、饱和漏电流、最大跨导的退化随着 HAL O掺杂剂量的增加而增加 .实验同时发现 ,器件参数的退化不仅与载流子迁移率的退化、漏串联电阻增大有关 ,而且与阈值电压的退化和应力前阈值电压有关 .

关 键 词：hot carrier PMOSFET HALO DEGRADATION 

分 类 号：TN386[电子电信—物理电子学]