4H-SiC功率MESFET的击穿特性  

Breakdown Characteristics of 4H-S iC Microwave Power MESFETs

作　　者：吕红亮[1] 张义门[1] 张玉明[1] 杨林安[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《Journal of Semiconductors》2004年第9期1132-1136,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 ( No.5 13 2 70 10 10 1)~~

摘　　要：研究了 4 H- Si C MESFET器件的电学击穿特性和热学稳定性 .建立了金属半导体场效应晶体管器件二维数值模型 ,分析了雪崩碰撞离化效应、隧穿效应和热效应在器件击穿中的作用 .综合考虑了栅极偏置、自热效应等因素对击穿的影响 .采用准静态方法 ,求解瞬态偏微分方程组 。A profound simulation study on the electrical breakdown characteristics and ther mal reliability is investigated.A two-dimensional numerical model for 4H-SiC MESFET is established and the effect of the avalanche and tunneling on the elect rical breakdown characteristics is analyzed.The dependence of breakdown voltage on gate bias,self-heating effect,and crystal orientation choice are also inves tigated systematically.For the transient and thermal reliability simulation,both the first-order backward difference formula (BDF1) and second-order backward differences formula (BDF2) are used to solve the extended matrix.

关 键 词：SIC 击穿特性 金属半导体场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]