Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管  

GsAs-Based Enhanced-Mode Metamorphic High Electron Mobility Transistor by Using Buried Pt-Schottky Gate

作　　者：陈效建[1] 吴旭[1] 李拂晓[1] 焦刚[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2004年第9期1137-1142,共6页半导体学报（英文版）

摘　　要：讨论了采用埋栅结构实现 Ga As基改性高电子迁移率晶体管 (MHEMT)增强型模式工作的有关问题 ,提出了增强型 MHEMT的设计与实现方法 .通过不同金属 (Al,Pt,Ti) / In Al As Schottky势垒系统的实验比较研究 ,确定在增强型 MHEMT工艺中采用具有最高势垒高度的 Pt Schottky埋栅结构 ;并进行了以最佳“推栅”温度为重点的器件工艺的深入研究 .在此基础上通过实验研制的原理性 1.0 μm× 10 0 μm Pt栅增强型 MHEMT的特性获得了夹断电压为 +0 .12 V,跨导为 4 70 m S/ m m及截止频率为 5 0 GHz的测试结果 ,优于使用同一外延片制作的The design and implementation related to Gs-based enhanced-mode metamorphic high electron mobility transistor (E-MHEMT) by using buried-gate technique are discussed.Based on experimental comparison of various metal/InAlAs Schottky bar rier characteristics among Al,Pt,and Ti,Pt is deployed as E-MHEMT buried-Scho ttky gate due to its highest barrier height and easy to bury into InAlAs layer.E mphasized on determination of the optimized temperature of Pt-gate 'pushing', process investigations are made.Upon these techniques,the prototype E-MHEMTs fa bricated with 1.0μm×100μm buried-Pt gate has the measured result:pinch-of f voltage +0.12V,trans-conductance 470mS/mm,and cutoff frequency 50GHz.I t is better than the contrasted D-MHEMTs made from the same wafer.

关 键 词：MHEMT 增强型 Pt基埋栅势垒 稳定性 

分 类 号：TN325.3[电子电信—物理电子学]