9OOnm高功率半导体激光器线阵列  

900nm High Output Power Semiconductor Laser Linear Array

作　　者：辛国锋[1] 冯荣珠[2] 陈国鹰[1] 花吉珍[2] 

机构地区：[1]河北工业大学信息学院微电子所,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050021

出　　处：《激光与光电子学进展》2003年第3期43-44,共2页Laser & Optoelectronics Progress

摘　　要：利用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs/GaAs分别限制应变单量子阱激光器工作物质。利用它制成半导体激光器线阵列,其峰值波长为900nm,光谱半高全宽小于4nm,在脉宽1000μs、13Hz的输入电流抽运下,输出峰值功率接近60W(室温,电流87A),斜率效率为0.64W/A。InGaAs/GaAs separated confinement heterostructure strained single quantum well materials was grown by the technology of metal organic chemical vapor deposition (MOCVD). The peak wavelength of the semiconductor laser linear array is 900nm, the full width at half maximum (FWHM) smaller than 4 nm, the peak output power near 60W (1000us, 13Hz, drive current 87A), and the slope efficiency is 0.6W/A.

关 键 词：半导体激光器线阵列 金属有机化台物气相淀积 单量子阱 材料结构 制作工艺 

分 类 号：TN248.4[电子电信—物理电子学]