p型GaN欧姆接触的研究进展  

Research and progress of ohmic contact to p-type GaN

作　　者：潘群峰[1] 刘宝林[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《半导体技术》2004年第8期15-18,33,共5页Semiconductor Technology

基　　金：国家自然科学基金项目(60276029);福建省自然科学基金项目(A0210006)

摘　　要：宽带隙的GaN作为半导体领域研究的热点之一,近年来发展得很快。p型GaN的欧姆接触问题一直阻碍高温大功率GaN基器件的研制。本文讨论了金属化方案的选择、表面预处理和合金化处理等几个问题,回顾了近年来p型GaN欧姆接触的研究进展。The wide-bandgap GaN has been extensively investigated and developed rapidly in recent years. But difficulty in obtaining low-resistance ohmic contacts to p-type GaN blocks the development of high temperature, high power GaN-based devices. Choice of metallization scheme, surface pretreatment and alloying process are discussed. The progress of ohmic contacts to p-type GaN are reviewed.

关 键 词：宽带隙 GAN 欧姆接触 表面预处理 合金化处理 

分 类 号：TN304.23[电子电信—物理电子学]