高速钢基体离子注氮对c-BN薄膜制备的影响研究  

Effect of nitrogen ions implantated in high-speed steel substrate on c-BN thin film deposition

作　　者：谭俊[1] 蔡志海[1] 张平[1] 唐云[1] 

机构地区：[1]装备再制造技术国防科技重点实验室,北京100072

出　　处：《真空》2004年第5期19-23,共5页Vacuum

基　　金：国家自然科学基金资助项目(59971065)

摘　　要：采用射频磁控溅射法在离子注氮的高速钢基体上沉积制备c-BN薄膜,主要研究离子注氮层对c-BN薄膜相结构和内应力的影响;采用各种现代分析方法对沉积的薄膜进行了表征分析,包括傅立叶红外光谱(FTIR)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等分析方法;试验结果表明:高速钢基体上离子注氮有利于立方氮化硼含量的提高和薄膜内应力的降低,同时注氮处理的高速钢基体上沉积的薄膜表面形貌平整,结晶性较好。并采用X射线衍射分析(XRD)对高速钢基体的离子注氮层进行了相结构分析,探索研究了离子注氮层对c-BN薄膜生长的影响。Nitrogen ions were implanted in a high-speed steel substrate, then a c-BN thin film was deposited on the substrate via RF magnetron sputtering. How the layer which the ions was been implanted in affects the phase structure and internal stress of the c-BN thin film was investigated by meaus of various sophisticated analysing apparatus, such as FTTR, XPS and AFM. The results showed that the ion implantation is beneficial to increasing the content of cubic-texture boron nitride and decreasing internal stress of the thin film and can offer a flat morphology of film surface with better crystallizablity. In addition, XRD was used to analyze the phase structure of the ion-implanted layer of high-speed steel substrate so as to ascertain the effect of the ion-implanted layer on the growth of c-BN thin film.

关 键 词：立方氮化硼薄膜 高速钢基体 离子注人 射频磁控溅射 

分 类 号：TG174.444[金属学及工艺—金属表面处理]