脉冲偏压电弧离子镀沉积温度的计算  

CALCULATION ON DEPOSITED TEMPERATURE DURING PULSED BIAS ARC ION PLATING

作　　者：白晓 [1] 林国强 [1] 董闯 [1] 闻立时 [2] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连,116024 [2]大连理工大学三束材料改性国家重点实验室,大连,116024,中国科学院金属研究所,沈阳,110016

出　　处：《金属学报》2004年第10期1069-1073,共5页Acta Metallurgica Sinica

基　　金：国家高技术研究发展计划资助项目2002AA302507

摘　　要：针对脉冲偏压电弧离子镀技术,分析了影响基体沉积温度的各项因素及其影响程度.在直流偏压电弧离子镀沉积温度计算模型的基础上,在偏压输出波形为近方波的相对规范形状的条件下,将脉冲离子轰击输入能量功率等效成直流输入功率与占空比的乘积,再基于能量平衡原理建立脉冲偏压电弧离子镀基体沉积温度的理论计算模型,最后用实测的沉积温度对计算模型进行检验,在-1000-0 V的偏压范围内,理论与实验得到了好的吻合.The influencing factors and their weights on deposited temperature have been studied in detail during pulsed bias arc ion plating (PBAIP). Based on the model of deposited temperature calculation in arc ion plating (AIP), and under the condition of the rectangle substrate voltage waveforms, the input power intensity, of ion bombardment in PBAIP can be equal to the product of the input power in AIP and duty cycle in PBAIR On the basis of energy conversation principle, a substrate temperature calculation model for PBAIP is established when the bias voltage varies from -1000 V to 0. Experiments are also used to verify the calculated results and a good agreement is obtained.

关 键 词：电弧离子镀 脉冲偏压 沉积温度 计算 

分 类 号：TB43[一般工业技术]