碳化硅单晶材料的溶剂热合成与表征  

Solvothermal Synthesis of SiC Single Crystals

作　　者：宁吉强[1] 杨碚芳[1] 傅正平[1] 王震[1] 张庶元[2] 

机构地区：[1]中国科学技术大学材料科学与工程系,合肥230026 [2]中国科学技术大学结构分析研究开放实验室,合肥230026

出　　处：《Chinese Journal of Chemical Physics》2004年第5期633-636,共4页化学物理学报（英文）

基　　金：ProjectsupportedbytheNationalNaturalScienceFoundationofChina

摘　　要：采用SiCl4、CCl4和金属K体系 ,以溶剂热合成法在高压釜中制备了碳化硅 (SiC)单晶材料 .通过X射线粉末衍射 (XRD)、Raman光谱和透射电子显微镜 (TEM)对产物进行了表征 .其中XRD数据显示所得产物为碳化硅 .TEM结果表明 ,采用不同剂量的金属K ,所得产物分别为丝状和片状的SiC单晶 .SiC单晶丝直径为 10～2 0nm ,长度可达 1.5 μm ;SiC晶片的横向尺寸为 0 .1～ 3μm ,具有规则多面体外形 ,显示阶梯状生长侧面 .此外 ,对SiC单晶材料的生长机理进行了讨论 ,研究了过饱和度对SiC晶体生长和形貌的影响 .SiC single crystals have been prepared by the method of solvothermal synthesis with a system of SiCl 4, CCl 4 and metal K in an autoclave. X-ray diffraction (XRD), Raman spectra and transmission electron microscopy (TEM) were used to characterize the products. XRD reveals that the products are SiC crystals and TEM exhibits that SiC single crystals of wires and platelets are obtained under different usages of metal K. The SiC wires have diameters of 10～20 nm and length up to 1.5 μm; the platelets have lateral dimensions of 0.1～3 μm, exhibiting regular polygonal shapes and step-bunched side surface. Furthermore, the growth mechanism of the SiC single crystals is discussed and the effect of supersaturation on the crystal growth and morphology is also investigated.

关 键 词：溶剂热合成 碳化硅 过饱和度 

分 类 号：TN304[电子电信—物理电子学] TQ163.4[化学工程—高温制品工业]