中子辐照硅的正电子湮没研究  

A study of radiation damage in neutron irradiated silicon by positron annihilation

作　　者：李安利[1] 岩田忠夫 李东宏[1] 郑胜男[1] 黄汉臣[1] 朱升云[1] 

机构地区：[1]中国原子能科学研究院,北京102413 [2]日本原子能研究所

出　　处：《核技术》1993年第10期588-590,共3页Nuclear Techniques

摘　　要：采用正电子湮没方法研究了1.45×10^(20)n/cm^2和3.10×10^(17)n/cm^2快中子辐照高纯单晶硅的辐射损伤及其退火效应。在343—1073K温度范围内测量了正电子湮没寿命随退火温度的变化。实验观察到氧-空位对和在高中子剂量辐照的Si中发现的双空位复合成四空位。正电子湮没短寿命成分τ_1是晶格正电子寿命和氧-空位对捕获的正电子寿命的加权平均值,而长寿命成分τ_2是双空位或四空位捕获的正电子湮没寿命。The positron annihilation lifetime measurements have been performed to study the defects and radiation damage in the 1.45×1020n/cm2 and 3.10×1017n/cm2 neutron irradiated silicon as a function of annealing temperature from 343 K to 1073 K. The oxygen- vacancy (O- V) pairs were observed in both high and low dose neutron irradiated silicon samples and the quadrivacancies were detected during the annealing process in the high dose neutron irradiated silicon only. The measured short lifetime τ1 is a weighted average of lifetimes of positrons annihilated in bulk and those trapped at the O-V pairs. The long lifetime τ2 is attributed to positrons trapped at the divacancies or quadrivacancies.

关 键 词：正电子湮没 寿命 硅 辐射效应 

分 类 号：O472[理学—半导体物理]