InGaAs PIN光电探测器的暗电流特性研究  

The Dark Current Characteristics of InGaAs PIN Photodetectors

作　　者：郝国强[1] 张永刚[1] 刘天东[1] 李爱珍[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《半导体光电》2004年第5期341-344,379,共5页Semiconductor Optoelectronics

基　　金：国家"973"计划资助项目(G20000683)

摘　　要：　从理论上分析了In0.53Ga0.47AsPIN光电探测器在不同掺杂浓度及反向偏压下的暗电流特性,并与研制的器件的实测结果进行了比较和讨论。模拟结果表明:在低偏压下,器件中的产生复合电流起主要作用,偏压增大时,隧道电流起主要作用,且In0.53Ga0.47As光吸收层的载流子浓度对器件的暗电流有很大的影响,实测器件特性与模拟结果完全符合。文中还对器件结面积和电极尺寸等对暗电流的影响进行了比较和分析。The dark current characteristics of In_(0.53)Ga_(0.47)As PIN photodetectors at different doping concentrations and reverse bias voltages have been researched theoretically,and compared with the measured results of our fabricated devices.Results show that the dart currents are dominated by generation-recombination mechanism at lower bias,whereas dominated by tunneling effects at higher bias,and the carrier concentration in the In_(0.53)Ga_(0.47)As absorption layer plays an important role.The simulated results are consistent with the measured ones entirely.The influence of junction area and bonding pad size on the dark current has been also analyzed.

关 键 词：光电探测器 暗电流 INGAAS 化合物半导体 

分 类 号：TN21[电子电信—物理电子学]