Si/Si直接键合界面的FTIR和XPS研究  

FTIR and XPS Analysis of Directly Bonded Si/Si Interface

作　　者：陈松岩[1] 谢生[1] 何国荣[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《半导体光电》2004年第5期372-375,共4页Semiconductor Optoelectronics

摘　　要：　通过新颖的键合方法实现了Si/Si直接键合。采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在。X射线光电子谱(XPS)测试结果进一步表明,界面主要为单质Si和SiOx混合网络,且随着退火温度的升高,界面层Si-Si直接成键的密度也越高。The Si/Si direct bonding has been achieved by a new bonding technology. Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding. The results show that there are notinfrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is consisted of Si and SiO_x. In addition, the research indicates also that the Si/Si bonding density is increased with the increase of bonding temperature.

关 键 词：硅 直接键合 红外透射谱 X射线光电子谱 

分 类 号：TN301.1[电子电信—物理电子学]