磁控溅射有机衬底ZnO∶SnO_2透明导电膜的结构和光电特性  

Structure and opto-electric properties of transparent conducting ZnO∶SnO films deposited on flexible substrates by r. f. magnetron sputtering

作　　者：黄树来[1] 马瑾[1] 计峰[1] 余旭浒[1] 王玉恒[1] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《功能材料》2004年第5期630-631,634,共3页Journal of Functional Materials

基　　金：教育部科学技术研究重点资助项目(重点02165);博士点基金资助项目(20020422056)

摘　　要：　采用磁控溅射技术在有机衬底上低温制备出具有低电阻率和良好附着性的ZnO∶SnO透明导电膜。研究了制备ZnO∶SnO薄膜的结构、成分和光电性质。制备薄膜为非晶结构,有机衬底ZnO∶SnO透明导电膜的最低电阻率约10-2Ω·cm,可见光平均透过率>82%。薄膜中的氧偏离理想化学配比,氧空位是薄膜中载流子的主要来源。Transparent conducting ZnO∶SnO films with low resistivity and good adhesion were deposited on flexible substrates by magnetron sputtering at room temperature. Characterization and composition of ZnO∶SnO films have been investigated. The deposited films are amorphous. The films deposited on organic substrates have a optimal resistivity 1.3×10^(-2)Ω·cm and the average transmittance in the visible region reachs 82%. There are many oxygen vacancie in the film, which was the dominating source of carrier in the obtained films.

关 键 词：有机衬底 ZnO:SnO薄膜 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055