MOCVD生长的平面型InGaAs/InP PIN光电探测器件  

PLANAR InGaAs/InP PIN PHOTODETECTORS GROWN BY MOCVD

作　　者：杨志鸿[1] 王树堂[1] 曾靖[1] 朱龙德[1] 孙捷[1] 夏彩虹[1] 沈戎[1] 归强[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《红外与毫米波学报》1993年第2期155-158,共4页Journal of Infrared and Millimeter Waves

摘　　要：讨论了采用MOCVD技术生长的平面型InGaAs/InPPIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜,大大提高了器件的量子效率,达到～96%,采用平面型结构有可能改善器件的稳定性和可靠性。The optical characteristics and fabrication process of planar InGaAs/InP PIN devices grown by MOCVD are discussed in this paper. After growing an InP window layer on the InGaAs absorption layer and fabricating an appropriate antireflection coating, the quantum efficiency of.the planar PIN devices increases obviously, reaching approximately 96%. At the same time, the stability and reliability of the devices may be improved because of using the planar structure.

关 键 词：量子效率 PIN结探测器 稳定性 

分 类 号：TN361[电子电信—物理电子学]