电场和气压对激光合成SiC超细粉末的影响  

Effects of Electric Field and Gas Pressure on Laser Synthesis of SiC Ultrafine Powders

作　　者：金桂林[1] 金晓英[1] 潘孝仁[1] 金乾元[1] 尤湧 

机构地区：[1]华东化工学院应用物理系

出　　处：《华东化工学院学报》1993年第5期648-652,共5页

摘　　要：用TEA CO_2激光诱导四甲基硅烷(TMS)的气相反应,生成了纯而均匀的SiC超细粉末,粒径小于0.2μm。把反应物置于均匀外电场中,可以使引发化学反应时所需的激光功率密度阀值降低一倍。TMS气压可达到40kPa。讨论了气体分压比对反应速度、产率与产物成分的影响。Pure and homogeneous SiC ultrafine powders were synthesized from tetramethyl silicane (TMS) through the vapor phase reaction induced by TEA CO_2 laser. The particle size is less than 0.2μm. Putting the reactants in uniform electric field, we reduced the laser power density threshold needed by said reaction by a factor of two. The vapor pressure of TMS reached 40kPa. The effects of gas pressure on reaction rate, yield, and product composition were discussed.

关 键 词：电场 碳化硅 陶瓷粉末 激光诱导 

分 类 号：O644.18[理学—物理化学]