Al-Si合金RIE参数选择  

Reactive Ion Etching of Al-Si Alloy: Select Etching Parameters

作　　者：李希有[1] 周卫[1] 张伟[1] 仲涛[1] 刘志弘[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《半导体技术》2004年第11期19-21,共3页Semiconductor Technology

摘　　要：采用正交试验法对二手RIE刻Al设备A-360进行工艺参数选择试验,并以均匀性、刻蚀速率、对PR选择比为评价指标。试验中发现RF功率是影响各评价指标的最主要因素。通过进一步优化工艺,制定出了均匀性小于3%,刻蚀速率高于300nm/min,对PR选择比好于1.8的刻Al实用工艺。Reactive ion etching (RIE) of Al-Si alloy was performed in order to select etchingparameters for the second hand equipment of A-360. The experiments were designed by means ofTaguchi method with uniformity, etching rate, and PR selectivity as evaluating indicators. In theexperiments, RF power was found to be a main factor which strongly affects three evaluating indica-tors . After chosen etching parameters properly, optimal etching procedures get uniformity<3%,etching rate>0nm /min, PR selectivity>8.

关 键 词：反应离子刻蚀 正交试验 Al刻蚀 刻蚀速率 

分 类 号：TN305.2[电子电信—物理电子学]