固体电介质中电致陷阱产生与电子捕获动力学  

KINETICS OF TRAP GENERATION AND ELECTRONS CAPTURE IN SOLID DIELECTRICS UNDER HIGH ELECTRICAL STRENGTH

作　　者：刘付德[1] 凌志远[1] 谢进[1] 张穗真 庄志强[1] 

机构地区：[1]华南理工大学无机材料科学与工程系

出　　处：《华南理工大学学报（自然科学版）》1993年第1期100-107,共8页Journal of South China University of Technology(Natural Science Edition)

摘　　要：考虑了固体电介质结构劣化的共同特点,本文从理论上表述了在宽广电场范围(10~5V/cm～击穿)作用下介质中电致陷阱产生的动力学过程,并以一级捕获动力学方程为依据,获得了包含新陷阱的陷阱捕获电子动力学特性方程,最后文中提出表面电位模型,实现了对这些动力学特性的研究,根据研究结果提出电击穿过程新模型。Considering the common characteristics of structuredegrading in solid dielectrics,a kinetic equation of trap creationand electrons capture under the application of wide range ofelectrical fisld(from 10~5V/cm to breakdown)is deduced in thispaper.Becides a measuring technology with surface potential isproposed to study such behaviours Then a new breakdown mecha-nism is suggested by taking account of the phenomena of trapcreation and detrapping due to impacting ionization between freeelectrons and the trapped.

关 键 词：陷阱 捕获电子 固体 电介击穿 

分 类 号：O483[理学—固体物理]