Au/n-ZnO肖特基势垒特性的退火行为研究  

Study on annealing on Au/n-ZnO Schottky barriers characteristics

作　　者：袁国栋[1] 叶志镇[1] 朱丽萍[1] 钱庆[1] 曾昱嘉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2004年第10期1252-1255,共4页Journal of Zhejiang University：Engineering Science

基　　金：国家"973"重点基础研究发展计划资助项目(G20000683);国家自然科学基金重点资助项目(90201038);教育部博士点基金资助项目(20020335010).

摘　　要：报道了Au/n ZnO形成的肖特基势垒经不同温度退火后其特性的变化.利用X射线衍射、扫描电子显微镜和扩展电阻测试对ZnO外延片的晶体质量和电学性能进行测试.采用集成电路标准工艺在ZnO外延层上制备了Si3N4隔离层及Au电极,并对该结构进行不同温度下的退火实验,分别测量其I V特性.结果表明ZnO外延层具有高度C轴取向,表面光洁,平整,外延层与衬底之间有明显的过渡区.退火前后的样品在室温下的I V测试结果表明,Au/n ZnO具有明显的整流特性,其中673K,1min退火所得的反向漏电流仅为-0.017μA(-5V).The characteristics of Au/n-ZnO Schottky barriers as functions of annealing temperature was investigated in this work. X-ray Diffraction, Scanning Electronic Micro-spectra and Spreading Resistance Profile were used to determine the crystal quality and electronic properties of ZnO epilayer. The Si3N4 insulating layer and the Au electrode were fabricated on ZnO by standard IC (integrate circuit) technique. This structure was annealed at different temperature and was used for I-V measurements. The results indicate that ZnO epilayers are highly C-axis oriented and that the surface of the ZnO is very clean and smooth. There is a sharp transitional region between the ZnO thin films and Al membrane. It is found that the contacts with and without annealing all show obvious rectifying capacity, and that 673 K, l min annealing showed-0.017 μA leakage current to-5 V.

关 键 词：ZNO薄膜 肖特基势垒 退火 I-V特性 

分 类 号：TN311.7[电子电信—物理电子学]