Modeling of Uniform／Non-Uniform Doping Effects for MOSFET Based on BSIM  

作　　者：ZHAOYang PARKEStephen BURKEFranklyn 

机构地区：[1]SchoolofElectricalandElectronicEngineering,NanjingNormalUniversity,Nanjing210097,China [2]DepatmentofElectricalandComputerEngineering,BoiseStateUniversity,Boise,ID83725,USA

出　　处：《Chinese Journal of Electronics》2004年第3期413-415,共3页电子学报（英文版）

摘　　要：In this paper the vertical uniform and nonuniform doping effects for long-channel device (L=2.5μm) of MOSFET are researched where BSIM Model is employed for parameter extraction of doping effects. Further，the description of experiment is introduced to show the process of modeling. Results show that the model and experimental result are in good compliance.

关 键 词：MOSFET BSIM 均匀掺杂 不均匀掺杂 

分 类 号：TN386.1[电子电信—物理电子学]