在C_(70)固体p-GaAs结构中的甚深深能级  

Highly deep levels in solid C_(70)/p-GaAs structures

作　　者：冉广照[1] 陈源[1] 陈开茅[1] 张晓岚[2] 刘鸿飞[3] 

机构地区：[1]北京大学物理学院,北京100871 [2]福州大学电子科学与应用物理系,福州350002 [3]北京有色金属研究院,北京100088

出　　处：《物理学报》2004年第10期3498-3503,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 3 760 3 0 )资助的课题~~

摘　　要：发展了恒温电容瞬态数据处理方法 ,称新方法为恒温电容瞬态时间积谱 (ICTTS) .用ICTTS方法测量分析了C70固体 p GaAs异质结的深能级 ,结果发现在C70 固体中存在两个很深的空穴陷阱 ,H1 和H2 ,它们的能级位置分别为Ev+0 85 6eV和Ev+1 0A New method for analyzing the isothermal capacitance transience is suggested, which is referred to as the isothermal capacitance transience-time spectroscopy (ICTTS). The method can be used to observe highly deep levels in semiconductors with wide band gaps near the room temperature. The deep levels of solid C_(70)/p-GaAs heterojunctions are investigated by this method. It is found that there are two hole traps, H_1 and H_2 with level of E_V+0.856 eV and E_V+1.037 eV in solid C_(70), respectively.

关 键 词：能级 固体 空穴 电容 异质结 发现 时间 瞬态 恒温 陷阱 

分 类 号：O562.1[理学—原子与分子物理] O471[理学—物理]