阵列式薄膜锰铜计的动态压阻响应研究  

Dynamic Piezoresistance Response of Array MnCu Film Gauges

作　　者：滕林[1] 杨邦朝[1] 杜晓松[1] 周鸿仁[1] 崔红玲[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《高压物理学报》2004年第3期279-282,共4页Chinese Journal of High Pressure Physics

基　　金：军事电子预研基金资助项目(AW030412)

摘　　要：利用直流磁控溅射薄膜工艺制备阵列式薄膜锰铜压阻计,以氧化铝作为基片和绝缘封装材料。在结构上,4个具有相同阻值的薄膜锰铜计在同一氧化铝基片上呈对称分布。51 72GPa压力下的动态加载实验表明,4个计的压阻一致性好,无高压旁路效应,验证了薄膜锰铜压阻计动态测试的准确性和可靠性。Array MnCu film piezoresistance gauges were fabricated by D.C. magnetism sputtering with 99% Al_2O_3 taken as substrate and insulator.Four MnCu gauges with the same resistance were deposited on one Al_2O_3 substrate symmetrically.Through dynamic loading experiments at the pressure of 51.72 GPa,it is indicated that four piezoresistance gauges have good consistency,and keep insulating trait under high pressure,which verifies the reliability of dynamic testing of MnCu film piezoresistance (gauges.)

关 键 词：薄膜 阵列式 对称分布 基片 直流磁控溅射 氧化铝 一致性 工艺 制备 动态加载 

分 类 号：O484[理学—固体物理] O782[理学—物理]