用电子束蒸发法低温无损情况下在有机柔性衬底上制作ITO膜及其性能研究  

Non-Destructive,Low Temperature Growth of Indium-Tin-Oxide Films on Flexible Organic Substrates by Electron Beam Evaporation

作　　者：李胜林[1] 冯凯[1] 刘浩然[1] 刘国华[1] 张德贤[1] 

机构地区：[1]南开大学电子科学与技术系,天津300071

出　　处：《真空科学与技术学报》2004年第4期303-305,共3页Chinese Journal of Vacuum Science and Technology

摘　　要：在有机材料柔性衬底上沉积ITO膜 ,需要在低温及无损伤 (即避免离子轰击及热损伤等 )情况下进行。为满足此要求 ,采用电子束蒸发法来实现在PI衬底上沉积ITO膜 ,对沉积参数如电子束特性、氧分压及衬底温度对薄膜质量的影响进行了研究 ;对薄膜结构、表面形貌、电学及光学特性进行了检测。最后 ,在PI衬底上获得高质量ITO膜 ,其可见光透过率超过90 % ,电阻率低于 5× 10 -4Ω·cm。A novel technique has been successfully developed to grow indium-tin-oxide (ITO) films by electron evaporation on flexible organic substrate at low temperature with minimized damages caused by thermal heating or ion bombardment.High quality ITO films were grown on polyimide(PI) substrate with a transmittance higher than 90% in visible light range and a resistivity lower than 5×10 -4 Ω·cm.Influence of various film growth factors,such as energies of the electron beam,oxygen partial pressure,substrate temperature,on the quality of the film were studied and its surface morphology,its electrical and optical properties were also discussed.

关 键 词：柔性衬底 无损 ITO膜 电子束蒸发法 衬底温度 性能研究 高质量 沉积参数 光透过率 薄膜结构 

分 类 号：TB43[一般工业技术] TN304[电子电信—物理电子学]