TEA CO_2激光制备碳化硅超细粉末  

TEA CO2 laser synthesis of SiC ultrafine powders

作　　者：金桂林[1] 金晓英[1] 潘孝仁[1] 金乾元[1] 徐华胜 

机构地区：[1]上海华东化工学院物理系

出　　处：《激光杂志》1993年第5期245-249,共5页Laser Journal

摘　　要：用TEA CO_2激光诱导四甲基硅烷的气相反应,合成了亚微米碳化硅粉末,工作气压为30～300torr(4-40×10~2Pa),激光功率密度为10~3W/cm^2量级。所得SiC颗粒纯弃高,球状,直径约0.2μm,体积分市均匀。粉末整体呈链状的疏松集合,可在乙醇中被分散。用付立叶变换红外光谱法与x射线荧光光谱法鉴定了产物的组成,用扫描电子显微镜与x射线衍射光谱法分析粉末状态与晶型。讨论了反应机理以及激光功率密度和容器尺寸对于反应的影响。Submicron silicon carbide powders were synthesized via the vapor phase reaction of tetramethyl silicane induced by TEA CO2 laser. The vapor pressure is 30 -300 torr (4-40 × 103Pa). The laser power density is of 103 W/cm2 order of magnitu-de. The SiC particles are pure, spherical, and uniform in size, their diameters are about 0.2μm. All powders appear loose chain-like agglomeration, and can be disper-sed in ethanol. The composition of products is identified with FTIR spectroscopy and x-ray fluorescence spectroscopy, the shape and crystal type of powders are ana-lysed with scanning electron microscopy and x-ray diffraction spectroscopy. The reaction mechanism and the influence of laser power density and container size on reaction are discussed.

关 键 词：激光 超细粉末 碳化硅 制备 

分 类 号：TQ127.1[化学工程—无机化工]