大直径直拉硅单晶炉热场的数值模拟  

Numerical Simulation of Thermal Field in a Large-Diameter CZ-Si Single Crystal Furnace

作　　者：王学锋[1] 翟立君[1] 周旗钢[1] 王敬[1] 戴小林[1] 吴志强[1] 

机构地区：[1]北京有色金属研究总院国家半导体工程研究中心,北京100088

出　　处：《稀有金属》2004年第5期890-893,共4页Chinese Journal of Rare Metals

基　　金：国家计委超大规模集成电路用 12英寸硅单晶研制子项目

摘　　要：数值模拟技术已经成为分析和发展工业化晶体生长工艺必不可少的工具。提出了直拉硅单晶生长过程温度分布的有限元模拟 ,通过对3 0 0mm单晶炉内热场的数值模拟计算 ,得出了晶体生长不同阶段的单晶炉内温度分布及相应的温度梯度和热流密度分布。Mathematical modelling and large scale simulation have become important and indispensable tools in the analysis and development of industrial crystal growth processes. A finite element method to calculate the temperature distribution of the CZ-Si single crystal was used for this purpose. Through numerical simulation of the furnace temperature in 300 mm CZ-Si single crystal, different temperature distribution during the growth of a silicon crystal, and their distributions of temperature gradient and heat flux are obtained.

关 键 词：直拉硅单晶 热场 数值模拟 

分 类 号：TN304.1[电子电信—物理电子学]