2.6～2.8GHz 100W硅微波脉冲功率晶体管  

2.6～2.8GHz 100W Silicon Microwave Pulsed Power Transistor

作　　者：黄雒光[1] 赵丽华[1] 刘英坤[1] 张鸿亮[1] 潘茹[1] 

机构地区：[1]中国电子科技集团公司第13研究所,石家庄050002

出　　处：《半导体技术》2004年第12期45-47,51,共4页Semiconductor Technology

摘　　要：研究并制造了2.6～2.8GHz输出功率100W、脉宽1μs、占空比25%、增益7dB、效率35%的硅微波脉冲功率晶体管。本文介绍了该器件的设计考虑和采用的工艺技术,给出了研制结果。Silicon microwave pulsed power transistor delivering 100W output power with 7dBgain and 35% collector efficiency at the frequency band of 2.6~2.8GHz under the conditions of 1mspulse width and 25% duly cycle has been developed and manufactured successfully. In this paper,transistor design considerations and critical wafer fabrication processes as well as the researchresults are presented.

关 键 词：硅 微波 脉冲 功率晶体管 内匹配 

分 类 号：TN323.4[电子电信—物理电子学]