MOCVD生长GaN材料p型掺杂最新进展  

Recent Advances in p-type GaN Film Using MOCVD

作　　者：赵浙[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2004年第8期4-6,共3页Materials Reports

基　　金：国家重大基础研究项目基金资助(No:G20000683-06)

摘　　要：p型GaN薄膜的实现是发展光电器件的关键工艺。使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。最近几年在掺杂工艺的改进和掺杂模型的理论研究方面都取得了显著进展。介绍了p型掺杂GaN中的自补偿模型、共掺杂工艺的原理和进展、PL谱的性质以及一些新的掺杂工艺。The formation of p-type GaN film is the key technology in developing optoelectronic devices. Ptype doping has been achieved by MOCVD with Mg(Cp_2Mg)doping, but the electronic and optical properties remain unsatisfied. In recent years, remarkable progress has been achieved in both experimental techniques for doping process and the theoretical study in modeling the doping process. This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL spectra used to prove the doping models and some new doping processes.

关 键 词：P型GaN薄膜 MOCVD P型掺杂 光电器件 自补偿模型 共掺杂工艺 

分 类 号：TN304.2[电子电信—物理电子学]