硅中高剂量锗离子注入的快速热退火研究  

Research on Rapid Thermal Annealing of High Dose Ge^+ Implantation into Silicon

作　　者：罗益民[1] 陈振华[2] 黄培云[3] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083 [2]湖南大学材料科学学院,长沙410082 [3]中南大学粉末冶金研究院,长沙410083

出　　处：《材料导报》2004年第7期101-103,共3页Materials Reports

基　　金：国家留学基金资助;中南大学文理基金项目9809GZ05资助

摘　　要：报道了利用高剂量 Ge^+注入制备 SiGe/Si 异质结的工作。100keV、5.3×10^(16)/cm^2Ge^+注入(001)SIMOX膜中,峰值Ge^+浓度接近20％。样品在不同温度下进行不同时间的快速热退火,X 射线衍射分析和背散射沟道谱研究表明:1000℃退火0.5h,退火效果较好;退火时间过短或过长,退火温度过高或过低,都将影响退火效果。Abstract The synthesis of SiGe/Si heterostructure by Ge^+ implantation into Si is reported.100keV,5.3×10^(16)/cm^2 Ge^+ is implanted into(001)SIMOX wafers,with germanium peak concentration up to 20 at%.Rapid ther-mal annealing was performed in different temperatures and times,the annealing effect was studied by X-ray diffractionand Rutherford Backscattering Spectroscopy(RBS)channeling spectra.It is found that good annealing effect may beattained at the 1000℃ for half an hour,and it is influenced when annealing time is longer or shorter,or annealingtemperature is higher or lower.

关 键 词：锗离子注入 快速热退火 SIGE/SI异质结 半导体材料 

分 类 号：TN304[电子电信—物理电子学]