Investigation on high magnetoresistance Ni_(0.81)Fe_(0.19) films grown on (Ni_(0.81)Fe_(0.19))_(1-x)Cr_(x) underlayers  

作　　者：LI Haifeng MA Jidong YU Guanghua LONG Shibin ZHAO Hongchen ZHU Fengwu 

机构地区：[1]Department of Material Physics and Chemistry, University of Science and Technology Beijing 100083, China

出　　处：《Chinese Science Bulletin》2003年第11期1087-1089,共3页

基　　金：This work was supported by the National Natural Science Foundation of China(Grant No.19890310);the Beijing Natural Science Foundation of China(Grant No.201 2011).

摘　　要：We have fabricated Ni0.81Fe0.19 films with (Ni0.81Fe0.19)1-xCrx films as underlayers by dc magnetron sputtering, the results show that larger anisotropic magnetoresistance (△R/R) values of Ni0.81Fe0.19 films are observed using the underlayers with Cr concentration of ~36 at.% at an optimum underlayer thickness of ~4.4 nm, the maximum AMR value is 3.35%. The results of atomic force microscope (AFM) and X-ray diffraction (XRD) show that the △R/R enhancement is attributed to the formation of large average grain size and the strong(111) texture in the Ni0.81Fe0.19 films.We have fabricated Ni0.81Fe0.19 films with (Ni0.81Fe0.19)1-xCrx films as underlayers by dc magnetron sputtering, the results show that larger anisotropic magnetoresistance (DR/R) values of Ni0.81Fe0.19 films are observed using the underlayers with Cr concentration of ~36 at.% at an optimum underlayer thickness of ~4.4 nm, the maximum AMR value is 3.35%. The results of atomic force microscope (AFM) and X-ray diffraction (XRD) show that the DR/R enhancement is attributed to the formation of large average grain size and the strong(111) texture in the Ni0.81Fe0.19 films.

关 键 词：磁致电阻 薄膜生长 衬底 直流磁电管 各向异性 Ni0.18Fe0.19 

分 类 号：O484.43[理学—固体物理]