PECVD沉积SiOP电介质膜及其XPS研究  

Study on X-ray Photon Spectroscopy for SiOP Dielectric Film Deposited by Plasma Enhanced Chemical Vapor Deposition

作　　者：王永晨[1] 杨格丹[1] 赵杰[1] 车经国 张淑云 

机构地区：[1]天津师范大学物理与电子信息学院,天津300074 [2]天津第四半导体器件厂,天津300111

出　　处：《光电子．激光》2004年第11期1292-1296,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60276013)

摘　　要：采用等离子体增强化学气相沉积(PECVD)技术沉积含P电介质薄膜,用于无杂质空穴扩散(IFVD)技术中InGaAsP InPMQW结构中新的包封层,替代传统的SiO2层。经X射线光电子谱(XPS)研究证明,该膜就是SiOP结构。快速退火(RTA)研究表明,该膜结构基本稳定,但膜中P原子存在明显扩散,它增强了InPMQW结构中In原子的外扩,却抑制了Ga原子的外扩。这些都明显区别于常规SiO2膜的性质。Dielectric films of SiOP was deposited by plasma enhanced chemical vapor deposition(PECVD).It is utilized as a new encapsulant layer in impurity-free vacancy disordering(IFVD) for InGaAsP/InP multiple quantum well(MQW) intermixing instead of conventional SiO_2 layer.X-ray photon spectroscopy(XPS) study indicates that the composition of the layer is SiOP.After rapid thermal annealing(RTA),the structure of SiOP is stable.The diffusion of P in SiOP film enhances the out-diffusion of In in InP MQW structure.However,it suppresses the out-diffusion of Ga.The characteristic of SiOP film is far from that of conventional SiO_2 films.

关 键 词：原子 电介质 XPS PECVD SIO2膜 空穴 证明 MQW 等离子体增强化学气相沉积 X射线光电子谱 

分 类 号：TN304[电子电信—物理电子学] O484[理学—固体物理]